Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor
Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor
复制标题
DOI：
10.1109/led.2019.2911994
复制
发表时间：
2019-04
影响因子：
4.9
通讯作者：
E. Findlay;F. Udrea;M. Antoniou
中科院分区：
文献类型：
--
作者：
E. Findlay;F. Udrea;M. Antoniou
本文介绍了双植入超结（SJ）沟槽反导（RC）绝缘栅双极晶体管（IGBT）的概念，在漂移区有两个植入的SJ柱：一个来自阴极一侧，另一个来自阳极一侧。提议的器件与当前的制造工艺兼容，并且可以在1.2 kv器件中实现完整的SJ结构，因为不需要在柱子之间对准。大量的计算机辅助设计（TCAD）模拟表明，与传统的RC-IGBT相比，使用这种双注入技术可以使整个SJ结构的关断损失减少77%。结果表明，on状态波形中的任何snapback都会显著增加关断损耗，只有深度SJ器件（pillar $\text {gap} < 10~\mu \text{m}$）才需要额外的处理费用。
This letter presents the dual implant superjunction (SJ) trench reverse-conducting (RC) insulated-gate bipolar transistor (IGBT) concept with two implanted SJ pillars in the drift region: one from the cathode side and another from the anode side. The proposed device is compatible with current manufacturing processes and enables a full SJ structure to be achieved in a 1.2-kV device, as alignment between the pillars is not required. Extensive technology computer aided design (TCAD) simulations have been performed and demonstrated that utilizing this dual implantation technique can result in a 77% reduction in turn-off losses for the full SJ structure, compared to a conventional RC-IGBT. The results show that any snapback in the ON-state waveform significantly increases the turn-off losses and only a deep SJ device (pillar $\text {gap} < 10~\mu \text{m}$ ) warrants the additional processing expense.