Permittivity and Loss Characterization of SU-8 Films for mmW and Terahertz Applications
Permittivity and Loss Characterization of SU-8 Films for mmW and Terahertz Applications
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DOI：
10.1109/lawp.2014.2380813
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发表时间：
2015-01-01
影响因子：
4.2
通讯作者：
Sertel, Kubilay
中科院分区：
文献类型：
--
作者：
Ghalichechian, Nima;Sertel, Kubilay
给出了SU-8厚膜在1ghz ~ 1thz全频段的介电常数测量方法。SU-8是一种高分辨率的uv图案光刻胶，可用于制造毫米波和太赫兹器件的高纵横比3d结构。在这里，我们报告了用太赫兹时域光谱测量的SU-8薄膜的介电常数和损耗切线。为了精确计算1太赫兹范围内的复介电常数，建立了二次多项式模型。全交联430亩m厚SU-8薄膜在1200 GHz和1000 GHz下的损耗切线分别为0.015、0.027和0.055。同样，相对介电常数分别为3.24、3.23和2.92。制备工艺和交联水平对该材料的损耗行为有显著影响，并在宽频带上量化了交联对介电常数的影响。这封信中报告的表征结果是开发下一代毫米波和太赫兹器件的平台。
The dielectric permittivity measurement of thick SU-8 film is presented for the entire frequency band of 1 GHz to 1 THz. SU-8 is a high-resolution UV-patternable photoresist that can be used for fabrication of high-aspect-ratio 3-D structures for millimeter-wave and terahertz devices. Here, we report the measured dielectric constant and loss tangent of SU-8 films using terahertz time-domain spectroscopy. A quadratic polynomial model is established for the accurate calculation of complex permittivity up to 1 THz. The loss tangent of fully cross-linked 430-mu m-thick SU-8 film was measured to be 0.015, 0.027, and 0.055 at 1, 200, and 1000 GHz, respectively. Similarly, relative permittivity was found to be 3.24, 3.23, and 2.92. The fabrication process and level of cross-linking were demonstrated to have significant impact on the loss behavior of this material and the impact of cross-linking on dielectric permittivity is quantified across a wide frequency band. The characterization results reported in this letter are a platform for developing next-generation millimeter-wave and terahertz devices.