Electron and hole confinement in stacked self-assembled InP quantum dots
Electron and hole confinement in stacked self-assembled InP quantum dots
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DOI：
10.1103/physrevb.62.10324
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发表时间：
2000-10-15
影响因子：
3.7
通讯作者：
Moshchalkov, VV
中科院分区：
文献类型：
--
作者：
Hayne, M;Provoost, R;Moshchalkov, VV
我们报道了在高达50 T的磁场中对堆叠自组装InP量子点的光致发光测量。对于三层堆叠的层，当层间距为4 nm或更小时，点变得强耦合。相反，双层堆叠的层没有显示出耦合的迹象。我们解释这种令人费解的耦合差异，提出了一个模型，其中的孔是弱限制在GaxIn 1-xP层分离层的点，并负责耦合。由于双堆叠点中仅存在一个这样的介入层，因此不存在耦合。我们的模型得到了激子质量和半径的实验结果的有力支持，并与现有的理论是一致的。
We report photoluminescence measurements on stacked self-assembled InP quantum dots in magnetic fields up to 50 T. For triply stacked layers the dots become strongly coupled when the layer separation is 4 nm or less. In contrast, doubly stacked layers show no sign of coupling. We explain this puzzling difference in coupling by proposing a model in which the holes are weakly confined in the GaxIn1-xP layers separating the layers of dots, and are responsible for the coupling. Since only one such intervening layer exists in the doubly stacked dots coupling is excluded. Our model is strongly supported by the exciton masses and radii derived from our experimental results, and is consistent with available theory.