Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
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半导体量子阱中表面复合速度和扩散长度的纳米测量
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
M. Baeumler
中科院分区：
文献类型：
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作者：
V. Malyarchuk;J. Tomm;V. Talalaev;C. Lienau;F. Rinner;M. Baeumler
我们使用近场显微技术来探测量子阱边缘区域的光致发光。在边缘附近，表面复合引起在微米长度尺度上的光致发光信号的逐渐变化。在这个过渡区的整体形状强烈依赖于激发强度。从求解二维扩散方程出发，导出了表面复合速度和扩散长度。结果表明，由于非辐射缺陷态的饱和，表面复合速度随强度的增加而减小。
We use a near-field microscopic technique to probe photoluminescence from the edge area of a quantum well. Near the edge, surface recombination gives rise to a gradual variation of the photoluminescence signal on a micrometer length scale. The overall shape in this transition region depends strongly on the excitation intensity. From solving two dimensional diffusion equations, we deduce the surface recombination velocity and the diffusion length. It is shown that the surface recombination velocity decreases with increasing intensity due to the saturation of nonradiative defect states.