700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)
700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)
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700-V 1.0-$hboxmOmega cdot hboxcm^2$埋栅 SiC-SIT (SiC-BGSIT)
DOI：
10.1109/led.2006.884724
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发表时间：
2006
影响因子：
4.9
通讯作者：
M. Kasuga
中科院分区：
文献类型：
--
作者：
Y. Tanaka;M. Okamoto;A. Takatsuka;K. Arai;T. Yatsuo;K. Yano;M. Kasuga
通过创新的制造工艺，成功研制出具有埋栅结构的超低导通电阻碳化硅静电感应晶体管（SiC-BGSIT）。采用亚微米沟槽干法刻蚀和沟槽外延相结合的方法制备了亚微米掩埋p<sup>+</sup>栅结构。当栅压VG =-12V时，器件的击穿电压<sub>VBR</sub>为700 V;当电流密度<sub>JD</sub>= 200 A/cm<sup>2</sup>，<sub>VG</sub>=2.5V时，器件的导通电阻<sub>RonS</sub><sup>为1.0mOmegamiddotcm2</sup><sub></sub>该R<sub>onS</sub>是~600 V级功率开关器件（包括其他SiC器件和GaN HEMT）的最低导通电阻
Ultralow on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed through innovative fabrication process. A submicrometer buried p<sup>+</sup> gate structure was fabricated by the combination of submicrometer trench dry etching and epitaxial growth on a trench structure. The breakdown voltage V<sub>BR</sub> and specific on-resistance R<sub>onS</sub> of the fabricated SiC-BGSIT were 700 V at a gate voltage V<sub>G</sub>=-12V, and 1.0 mOmegamiddotcm<sup>2</sup> at a current density J<sub>D</sub>=200A/cm<sup>2</sup> and V<sub>G</sub>=2.5V, respectively. This R<sub>onS</sub> is the lowest on-resistance for ~600 V class power switching devices, including other SiC devices and GaN HEMTs