The synthesis and structural characterization of boron-doped silicon-nanocrystals with enhanced electroconductivity
The synthesis and structural characterization of boron-doped silicon-nanocrystals with enhanced electroconductivity
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DOI：
10.1088/0957-4484/20/36/365207
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发表时间：
2009-09
期刊：
影响因子：
3.5
通讯作者：
Keisuke Sato;K. Niino;N. Fukata;K. Hirakuri;Y. Yamauchi
中科院分区：
文献类型：
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作者：
Keisuke Sato;K. Niino;N. Fukata;K. Hirakuri;Y. Yamauchi
首次成功制备了在可见光区域具有波长可调光致发光（PL）特性的硼（B）掺杂硅纳米晶体（Si-NC），从而显着增强了电导率。通过共沉积 p 型 Si(100) 芯片/硼芯片/二氧化硅盘靶在 p 型 Si(100) 衬底上制备 B 掺杂 Si-NC。随着用作靶材的B片的数量增加，掺杂的B含量逐渐增加。这里Si-NC中的掺杂B含量控制在0至0.4、0.7、2.3at.%。通过高分辨率透射电子显微镜（HRTEM）观察、显微拉曼散射光谱分析等对所获得的Si-NCs的B元素态、组成比和表面状况进行了充分表征。我们的B掺杂Si-NCs同时具有可见光区的连续发光特性和增强的导电性。 PL峰的红移通过B掺杂量的增加得到证实。从光电器件和电致发光（EL）显示器的应用角度来看，这篇论文应该非常重要。
Boron (B)-doped silicon-nanocrystals (Si-NCs) with wavelength-tunable photoluminescence (PL) properties in the visible region are successfully prepared for the first time, leading to significant enhancement of electroconductivities. The B-doped Si-NCs are prepared on a p-type Si(100) substrate by co-deposition of p-type Si(100) chips/boron chips/silica disk targets. As the number of the B chips used as the target is increased, the amount of doped B content increases gradually. Here the amount of doped B content in the Si-NCs is controlled from 0 to 0.4, 0.7, 2.3 at.%. The B elemental states, compositional ratios, and surface condition of the obtained Si-NCs are fully characterized by high-resolution transmission electron microscopy (HRTEM) observations, micro-Raman scattering spectroscopic analysis, etc. Our B-doped Si-NCs possess both the continuous luminescence property in the visible region and enhanced electroconductivity. The red-shift of the PL peak is confirmed by the increase of the amount of doped B content. This paper should be very important from the viewpoint of application to optoelectronic devices and electroluminescent (EL) displays.