Neutron induced single-word multiple-bit upset in SRAM
Neutron induced single-word multiple-bit upset in SRAM
复制标题
SRAM 中的中子引起单字多位翻转
DOI：
10.1109/23.819103
复制
发表时间：
1999
影响因子：
1.8
通讯作者：
P. Renberg
中科院分区：
文献类型：
--
作者：
K. Johansson;M. Ohlsson;N. Olsson;J. Blomgren;P. Renberg
本文对九种商用静态随机存取存储器（SRAM）在八种不同中子能量（0-11 MeV，14 MeV，22 MeV，35 MeV，45 MeV，75 MeV，96 MeV，160 MeV）下的单字多位翻转（SMU）频率进行了测量。在这些实验中使用的SRAM类型的大小从256 Kbit到1 Mbit，日期代码范围从9209到9809。结果表明，对中子能量的依赖性略有上升。此外，在两个中子能量，45 MeV和96 MeV，进行了实验，电源电压对SMU率的影响进行了研究。在96 MeV下使用五种设备类型，并且电源电压在5 V、3.3 V和2.5 V之间变化。在45 MeV下，在5 V和3.3 V下辐照三种设备。实验表明总翻转量和SMU之间的关系，表明没有明确的电源电压依赖性。
The single-word multiple-bit upset (SMU) frequency for nine commercial static random access memories (SRAM) have been evaluated at eight different neutron energies; 0-11 MeV, 14 MeV, 22 MeV, 35 MeV, 45 MeV, 75 MeV, 96 MeV, 160 MeV. The SRAM types used at these experiments have sizes from 256 Kbit up to 1 Mbit, with date-codes ranging from 9209 up to 9809. The result showed a slightly rising dependence on the neutron energy. Also experiments at two neutron energies, 45 MeV and 96 MeV, were performed where the supply voltage influence on the SMU-rate was studied. Five device types were used at 96 MeV and the supply voltage was changed between 5 V, 3.3 V and 2.5 V. At 45 MeV three devices at 5 V and 3.3 V were irradiated. The experiments showed a relation between the amount of total upset and SMU that indicates no clear supply voltage dependence.