Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer
Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer
复制标题
DOI：
10.1088/0268-1242/30/3/035010
复制
发表时间：
2015-01
影响因子：
1.9
通讯作者：
Dong‐Seok Kim;C. Won;Hee-Sung Kang;Young-Jo Kim;Yong Tae Kim;I. Kang;Jung-Hee Lee
中科院分区：
文献类型：
--
作者：
Dong‐Seok Kim;C. Won;Hee-Sung Kang;Young-Jo Kim;Yong Tae Kim;I. Kang;Jung-Hee Lee
我们提出了一种新的半绝缘GaN缓冲层，它由多个碳掺杂和未掺杂的GaN层组成。缓冲层显示出足够好的半绝缘特性，这归因于碳掺杂的GaN层和未掺杂的GaN层之间的耗尽效应，即使周期性结构中的碳掺杂的GaN层的厚度被设计为非常薄以使并入缓冲层中的总碳最小化。通过霍尔测量、X射线衍射和二次离子质谱证实，在该缓冲层上生长的AlGaN/AlN/GaN异质结构比在传统的厚的掺碳半绝缘GaN缓冲层上生长的具有更好的电学和结构性能.所制造的器件也表现出优异的缓冲击穿特性。
We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics.