A new concept of atomically thin p–n junction based on Ca2N/Na2N donor–acceptor heterostructure: a first-principles study

A new concept of atomically thin p–n junction based on Ca2N/Na2N donor–acceptor heterostructure: a first-principles study
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基于Ca2N/Na2N供体-受体异质结构的原子级薄p-n结的新概念:第一性原理研究

DOI:
10.1039/d2nr03072a
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发表时间:
2022
期刊:
影响因子:
6.7
通讯作者:
Wei Wei
Wei Wei
中科院分区:
材料科学2区
文献类型:
--
作者:
Shiqiang Yu;Baibiao Huang;Ying Dai;Wei Wei

文献摘要

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在原子级薄的p-n结中,传统的实现p -或n -区的掺杂和注入策略在纳米尺度下将失效,肖特基势垒和费米势垒将被破坏。
In atomically thin p – n junctions, the traditional strategies such as doping and implantation for realizing the p - or n - region will fail at nanoscale, and the Schottky barrier and Fermi...