Microstrip resonators for electron‐spin resonance
Microstrip resonators for electron‐spin resonance
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用于电子自旋谐振的微带谐振器
DOI:
10.1063/1.1142418
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发表时间:
1991
影响因子:
1.6
通讯作者:
R. H. Silsbee
中科院分区:
文献类型:
--
作者:
W. J. Wallace;R. H. Silsbee
Direct detection of thin‐film and interfacial electron‐spin resonance (ESR) pushes conventional techniques to the noise limit for those techniques and requires use of large‐area samples. Several microstrip resonator structures are compared here to conventional techniques and experimental results reported. Aluminum microstrip resonators are shown to have from 3 to 10 times the sensitivity to two‐dimensional systems as waveguide cavities, while needing only about 1/20th the sample area. A microstrip resonator metal‐oxide‐superconductor field‐effect‐transistor structure for study of inversion layer conduction electron‐spin resonance is reported in which the resonator functions as the gate, and ohmic contact is made to the inversion layer. A ‘‘microstrip induction spectrometer’’ is described in which a bimodal microstrip resonator is used along with a cryogenically cooled amplifier for study of lines with very long relaxation times. The ultimate sensitivity to Curie law spins of this spectrometer is 1×108 spi...