Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices

Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices
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DOI:
10.1063/1.4907011
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发表时间:
2015-01
影响因子:
4
通讯作者:
Haoming Wei;Marcus Jenderka;M. Bonholzer;M. Grundmann;M. Lorenz
Haoming Wei;Marcus Jenderka;M. Bonholzer;M. Grundmann;M. Lorenz
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Haoming Wei;Marcus Jenderka;M. Bonholzer;M. Grundmann;M. Lorenz

文献摘要

相似文献

在外延[LaNiO 3(d nm)/LaAlO 3(2 nm)]10(100)超晶格(以下简称[d/2]10 SLs)中,当LaNiO 3单层厚度从4 nm减小到1.2 nm时,出现了尺寸可控的金属绝缘体转变. [4/2]10 SL显示具有正电阻率温度系数的金属行为,而[2/2]10 SL显示具有从3D到二维单层维度的交叉的金属-绝缘体转变。[1.2/2]10 SL的电阻率主要由二维变程跳跃控制,局域化长度约为0.035 nm。
A dimensionality controlled metal insulator transition in epitaxial [LaNiO3 (d nm)/LaAlO3(2 nm)]10 (100) superlattices (thereafter [d/2]10 SLs) is demonstrated for decreasing LaNiO3 single layer thickness from 4 nm down to 1.2 nm. The [4/2]10 SL shows metallic behavior with positive resistivity temperature coefficient, while the [2/2]10 SL shows a metal-insulator transition with crossover from 3D to two-dimensional single-layer dimensionality. Strong localization appears for the [1.2/2]10 SL with the resistivity being dominated by two-dimensional variable range hopping with a localization length of about 0.035 nm.