GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE
GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE
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DOI：
10.1149/1.2086742
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发表时间：
1990-05-01
影响因子：
3.9
通讯作者：
AKASAKI, I
中科院分区：
文献类型：
--
作者：
AMANO, H;KITOH, M;AKASAKI, I
首次报道了以Cp2 Mg或MCp2 Mg为镁源气体的金属有机气相外延生长掺镁GaN及其发光特性。结果表明，GaN中的镁浓度与镁源气体的流量成正比，在850~1040℃范围内，GaN中的镁掺杂效率与衬底温度无关，而GaN中的镁作为受主形成蓝色发光中心。利用GaN：Mg/GaN可以制备出高效的近紫外光和蓝光LED，GaN在室温下具有3.39 eV的直接跃迁禁带，是一种很有前途的蓝光发光器件半导体。单晶GaN的制备通常采用在蓝宝石衬底上异质外延的方法。然而，由于GaN和蓝宝石之间存在较大的晶格失配和热膨胀系数差异，生长出无裂纹的平坦表面的高质量GaN薄膜是相当困难的。利用金属-有机气相外延(MOVPE)技术，在低温下沉积了薄的AlN缓冲层，成功地解决了这些问题，并能够生长出镜面无裂纹(1，2)的高质量GaN薄膜。
Growth and luminescence properties of Mg-doped GaN prepared by metal-organic vapor phase epitaxy, in which Cp2Mg or MCp2Mg is used as the Mg source gas, are reported for the first time. It was found that the Mg concentration in GaN is proportional to the flow rate of the Mg source gas; the doping efficiency of Mg into GaN is independent of the substrate temperature from 850 to 1040~ and Mg in GaN acts as an acceptor and forms blue luminescence centers. By using GaN: Mg/GaN, an efficient near-UV and blue LED can be fabricated.GaN is a promising semiconductor for the fabrication of blue light emitting devices, since it has a direct transition bandgap of 3.39 eV at room temperature. For the preparation of single crystalline GaN, heteroepitaxial growth on sapphire substrate is usually used. However, it is fairly difficult to grow high-quality GaN films with a fiat surface free from cracks, because of the large lattice mismatch and large difference in the thermal expansion coefficient between GaN and sapphire. By metal-organic vapor phase epitaxy (MOVPE) using a thin A1N buffer layer deposited at low temperatures, we have succeeded in solving these problems and have been able to grow high-quality GaN films with specular surfaces free from cracks (1, 2).