Modelling radiation damage to pixel sensors in the ATLAS detector
Modelling radiation damage to pixel sensors in the ATLAS detector
复制标题
对 ATLAS 探测器中像素传感器的辐射损伤进行建模
DOI：
10.1088/1748-0221/14/06/p06012
复制
发表时间：
2019
影响因子：
1.3
通讯作者：
Aaboud M
中科院分区：
文献类型：
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作者：
Aaboud M
作为最接近交互点的子探测器，ATLAS 像素探测器在其使用寿命期间将暴露在前所未有的辐射量下。组成探测器的模块被设计为耐辐射，但它们的性能仍会随着时间的推移而降低。因此，对辐射损伤的影响进行建模，以准确模拟带电粒子与探测器的相互作用并重建其轨迹（轨迹）至关重要。辐射损伤效应建模与大型强子对撞机 (LHC) 的高光度 (HL) 升级尤其相关；瞬时光度和积分光度将超过当前的
As the subdetector in closest proximity to the interaction point, the ATLAS pixel detector will be exposed to an unprecedented amount of radiation over its lifetime. The modules comprising the detector are designed to be radiation tolerant, but their performance will still degrade over time. It is therefore of crucial importance to model the impact of radiation damage for an accurate simulation of charged-particle interactions with the detector and the reconstruction of their trajectories (tracks). Modelling radiation damage effects is especially relevant for the high-luminosity (HL) upgrade of the Large Hadron Collider (LHC); the instantaneous and integrated luminosities will exceed current