Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications
Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications
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DOI：
10.1016/j.sse.2011.07.008
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发表时间：
2011-10
影响因子：
1.7
通讯作者：
Chong Li;A. Khalid;Sonia H. Paluchowski Caldwell;M. Holland;G. Dunn;I. Thayne;D. Cumming
中科院分区：
文献类型：
--
作者：
Chong Li;A. Khalid;Sonia H. Paluchowski Caldwell;M. Holland;G. Dunn;I. Thayne;D. Cumming
