Gamma radiation-induced nanodefects in diffusive memristors and artificial neurons.
Gamma radiation-induced nanodefects in diffusive memristors and artificial neurons.
复制标题
扩散忆阻器和人工神经元中伽马辐射引起的纳米缺陷。
DOI：
10.1039/d3nr01853a
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发表时间：
2023
期刊：
影响因子：
6.7
通讯作者：
Pattnaik DP
中科院分区：
文献类型：
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作者：
Pattnaik DP
众所周知，平均能量为1.25 MeV的伽马光子会在半导体电子器件中产生大量缺陷。在这里，我们研究了伽马辐射对基于分散在二氧化硅介电基质中的金属银纳米颗粒的扩散忆阻器的新效应。我们的实验结果表明，在暴露于辐射后，忆阻器和人工神经元由它们制成的表现出更好的性能，在稳定的挥发性电阻开关和更高的尖峰频率，分别与原始样品相比。同时，我们观察到部分氧化的银和减少硅开关二氧化硅层内。我们提出的纳米夹杂物的减少硅分布在整个二氧化硅层的骨干金属纳米粒子形成导电丝，我们的理论模拟辐射引起的扩散过程中的变化所支持的。我们的研究结果提出了一个新的机会，工程师所需的特性扩散忆阻器，以模仿生物神经元和开发生物启发的计算技术。
Gamma photons with an average energy of 1.25 MeV are well-known to generate large amounts of defects in semiconductor electronic devices. Here we investigate the novel effect of gamma radiation on diffusive memristors based on metallic silver nanoparticles dispersed in a dielectric matrix of silica. Our experimental findings show that after exposure to radiation, the memristors and artificial neurons made of them demonstrate much better performance in terms of stable volatile resistive switching and higher spiking frequencies, respectively, compared to the pristine samples. At the same time we observe partial oxidation of silver and reduction of silicon within the switching silica layer. We propose nanoinclusions of reduced silicon distributed across the silica layer to be the backbone for metallic nanoparticles to form conductive filaments, as supported by our theoretical simulations of radiation-induced changes in the diffusion process. Our findings propose a new opportunity to engineer the required characteristics of diffusive memristors in order to emulate biological neurons and develop bio-inspired computational technology.