The vacancy in silicon: Identical diffusion properties at cryogenic and elevated temperatures
The vacancy in silicon: Identical diffusion properties at cryogenic and elevated temperatures
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硅中的空位：低温和高温下相同的扩散特性
DOI：
10.1063/1.2937198
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发表时间：
2008
影响因子：
3.2
通讯作者：
G. D. Watkins
中科院分区：
文献类型：
--
作者：
G. D. Watkins
空位对硅中自扩散的贡献，最近在Shimitzu等人的研究中揭示。98，095901（2007）]，以证明指前项以及焓项与孤立的中性空位的项精确匹配，如多年前在低温下通过电子顺磁共振和深能级瞬态谱所确定的。因此，持续的建议，一个“扩展”的空缺与非常不同的迁移性能在高温下是不正确的。只有一个空缺。
The vacancy contribution to self-diffusion in silicon, recently revealed in the study by Shimitzu et al. [Phys. Rev. Lett. 98, 095901 (2007)], is analyzed to demonstrate that the pre-exponential term, as well as the enthalpy term, matches accurately to that of the isolated neutral vacancy, as determined many years earlier at cryogenic temperatures by electron paramagnetic resonance and deep level transient spectroscopy. The persistent suggestion of an “extended” vacancy with very different migrational properties at elevated temperatures is therefore incorrect. There is only one vacancy.