Integration of silicon nanowire bridges in microtrenches with perpendicular bottom-up growth promoted by surface nanoholes
Integration of silicon nanowire bridges in microtrenches with perpendicular bottom-up growth promoted by surface nanoholes
复制标题
DOI：
10.35848/1347-4065/ac50bd
复制
发表时间：
2022-02
影响因子：
1.5
通讯作者：
A. Uesugi;Shusuke Nishiyori;Tatsuya Nakagami;K. Sugano;Y. Isono
中科院分区：
文献类型：
--
作者：
A. Uesugi;Shusuke Nishiyori;Tatsuya Nakagami;K. Sugano;Y. Isono
提出了一种硅纳米线(SiNWs)桥在微沟槽中的集成方法，该方法通过两步紫外光曝光法将催化剂Au纳米颗粒的局部排列与表面纳米孔促进垂直生长的气-液-固(VLS)自下而上生长和金属辅助化学腐蚀相结合。将直径为60 nm的Au纳米粒子排列在10微米宽的微沟槽的单侧壁上，采用两种不同的面积大小来评估其对到达相对侧壁的SiNWs桥的成品率的影响。在500°C下，4小时的VLS工艺在微沟槽中产生了垂直的SiNWs桥，并且获得了较高的成品率：SiNWs桥的密度与Au纳米颗粒的密度之比为30.7%，排列区的密度为2.1/µm2。较少的SiNW在那里显示出初始的倾斜生长，并且大多数桥具有线性的形态。讨论了SiNWs桥的成品率，重点讨论了微沟槽的深度位置和表面纳米孔的深度。
An integration method of silicon nanowires (SiNWs) bridges in microtrenches was demonstrated combining a local arrangement of catalyst Au nanoparticles by two-step UV lithography, and a vapor–liquid–solid (VLS) bottom-up growth with perpendicularity promotion by surface nanoholes with metal-assisted chemical etching. Au nanoparticles with a diameter of 60 nm were arranged on one-side walls of 10 µm wide microtrenches, with two types of area sizes to evaluate the influence on the yield of SiNWs bridges reaching opposite sidewalls. A four-hour VLS process at 500 °C produced perpendicular SiNWs bridges in the microtrenches, and a higher yield was obtained with a narrow-area arrangement: a 30.7% ratio of densities of SiNWs bridges to Au nanoparticles, and a 2.1/µm2 density in the arrangement area. Fewer SiNWs showed initial oblique growth there, and most of the bridges had a linear morphology. The yield of SiNWs bridges was discussed focusing on depth positions in microtrenches and the depths of surface nanoholes.