New Growth Conditions for the c-Axis Oriented NdBa2Cu3Ox Films by Pulsed Laser Deposition: Lower Substrate Temperature and Higher Oxygen Pressure
New Growth Conditions for the c-Axis Oriented NdBa2Cu3Ox Films by Pulsed Laser Deposition: Lower Substrate Temperature and Higher Oxygen Pressure
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脉冲激光沉积 c 轴取向 NdBa2Cu3Ox 薄膜的新生长条件：较低的基底温度和较高的氧气压力
DOI：
10.1143/jjap.38.l923
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发表时间：
1999
影响因子：
1.5
通讯作者：
T. Morishita
中科院分区：
文献类型：
--
作者：
H. Zama;K. Ishikawa;Takeo Suzuki;T. Morishita
c轴取向的NdBa 2Cu 3 Ox（NdBCO）膜生长的衬底温度比c轴取向的YBa 2Cu 3 Ox（YBCO）膜生长的衬底温度高80-100°C。尽管NdBCO具有比YBCO更上级的结晶和结晶性能，但这是构成用于器件应用的多层的缺点。我们成功地生长的c轴取向的NdBCO薄膜的温度范围内低于a轴择优取向的薄膜在高氧气压力下，通过脉冲激光沉积。最佳c轴取向生长条件确定如下：衬底温度为790°C，氧气压力为900 mTorr，激光能量密度为0.5 J/cm 2。
The substrate temperature at which the c-axis oriented NdBa2Cu3Ox (NdBCO) film grows is 80–100°C higher than that for the c-axis oriented YBa2Cu3Ox (YBCO). This is a drawback of composing multilayers for device applications although NdBCO has crystalline and superconductive properties superior to those of YBCO. We successfully grew the c-axis oriented NdBCO films in the temperature range lower than that for the a-axis preferred oriented film at a high oxygen pressure by pulsed laser deposition. The optimum c-axis oriented growth condition was determined as follows: substrate temperature is 790°C, oxygen pressure 900 mTorr, and laser energy density 0.5 J/cm2.