Reversible switching between p- and n-type conduction in the semiconductor Ag10Te4Br3.
Reversible switching between p- and n-type conduction in the semiconductor Ag10Te4Br3.
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DOI：
10.1038/nmat2358
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发表时间：
2009-02
期刊：
影响因子：
41.2
通讯作者：
T. Nilges;S. Lange;M. Bawohl;Jens Markus Deckwart;M. Janssen;H. Wiemhöfer;R. Decourt;B. Chevalier-B.-Ch
中科院分区：
文献类型：
--
作者：
T. Nilges;S. Lange;M. Bawohl;Jens Markus Deckwart;M. Janssen;H. Wiemhöfer;R. Decourt;B. Chevalier-B.-Ch
半导体是现代电子中的关键材料，被广泛用于制造集成电路中的晶体管以及用于能量转换的热电材料，人们对开发和改进新材料和技术以提高电子器件和热电材料的性能产生了极大的兴趣。四晶型Ag10Te4Br3是一种能够通过简单的温度变化来改变其电学性质的半导体。高的银迁移率、较小的非化学计量比范围和碲亚结构中的内部氧化还原过程相结合，除了有机聚合物范围内的热扩散率外，还导致1,400 μV K−1的热功率下降。在一种化合物中，只需通过温度就可以将半导体性质从离子导电可逆地切换到电子导电，这使得半导体开关等新型电子设备成为可能。
Semiconductors are key materials in modern electronics and are widely used to build, for instance, transistors in integrated circuits as well as thermoelectric materials for energy conversion, and there is a tremendous interest in the development and improvement of novel materials and technologies to increase the performance of electronic devices and thermoelectrics. Tetramorphic Ag10Te4Br3is a semiconductor capable of switching its electrical properties by a simple change of temperature. The combination of high silver mobility, a small non-stoichiometry range and an internal redox process in the tellurium substructure causes a thermopower drop of 1,400 μV K−1, in addition to a thermal diffusivity in the range of organic polymers. The capability to reversibly switch semiconducting properties from ionic to electronic conduction in one single compound simply by virtue of temperature enables novel electronic devices such as semiconductor switches.