Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
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DOI：
10.1063/1.3058687
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发表时间：
2009-01-05
影响因子：
4
通讯作者：
Park, Yongjo
中科院分区：
文献类型：
--
作者：
Xu, Jiuru;Schubert, Martin F.;Park, Yongjo
采用金属有机物气相外延技术生长了具有偏振匹配GaInN/GaInN多量子阱有源区的蓝光发光二极管。GaInN/GaInN MQW结构降低了有源区中异质界面处的极化片电荷的幅度。与传统的GaInN/GaN MQW LED相比，GaInN/GaInN MQW LED显示出增强的光输出功率，降低的效率下降，更低的正向电压，更小的二极管理想因子，以及减少的波长偏移。
Blue light-emitting diodes (LEDs) with polarization-matched GaInN/GaInN multi-quantum-well (MQW) active regions are grown by metal-organic vapor-phase epitaxy. The GaInN/GaInN MQW structure reduces the magnitude of polarization sheet charges at heterointerfaces in the active region. The GaInN/GaInN MQW LEDs are shown to have enhanced light-output power, reduced efficiency droop, a lower forward voltage, a smaller diode ideality factor, and decreased wavelength shift, compared with conventional GaInN/GaN MQW LEDs.