Molecular beam epitaxial growth and magneto-transport studies of the InSb/CdTe material systems
Molecular beam epitaxial growth and magneto-transport studies of the InSb/CdTe material systems
复制标题
InSb/CdTe 材料系统的分子束外延生长和磁输运研究
DOI：
--
复制
发表时间：
1990
期刊：
影响因子：
--
通讯作者：
C. Whitehouse
中科院分区：
文献类型：
--
作者：
T. Golding;S. K. Greene;M. Pepper;J. Dinan;A. Cullis;G. Williams;C. Whitehouse
报道了InSb/CdTe异质结和多层结构的分子束外延生长和表征。结果表明，采用Cd/Te流量比为3/1(JCd/JTe=3)的Cd/Te磁通密度比(JCd/JTe=3)可以形成高质量的InSb/CdTe界面。当衬底温度为200C时，在JCd/JTe=3的助熔剂条件下，在InSb衬底上生长的单一异质结中观察到了量子霍尔效应。在4.2K，迁移率在24000 cm~2 V~(-1)S~(-1)范围内，电学结果是可重复的。
The authors report studies into the molecular beam epitaxial growth and characterisation of InSb/CdTe heterojunction and multilayer structures. It is shown that the use of a Cd/Te flux ratio of 3/1 (JCd/JTe=3) during the growth of CdTe results in the formation of a high-quality InSb/CdTe interface as assessed by transmission electron microscopy and magneto-transport studies. The quantum Hall effect is observed in single heterostructures formed by the growth of CdTe under JCd/JTe=3 flux conditions on InSb at a substrate temperature of 200 degrees C. The electrical results are repeatable with mobilities in the region of 24000 cm2 V-1 s-1 at 4.2 K. Growth of CdTe under JCd/JTe=3 flux conditions has allowed growth on InSb at a substrate temperature of 300 degrees C and resulted in the successful growth of InSb/CdTe superlattices at substrate temperatures compatible with the growth of electrically active InSb.