Resistance switching characteristics in Li-doped NiO
Resistance switching characteristics in Li-doped NiO
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DOI：
10.1063/1.2837102
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发表时间：
2008-02-01
影响因子：
3.2
通讯作者：
Hong, J. P.
中科院分区：
文献类型：
--
作者：
Jung, Kyooho;Choi, Joonhyuk;Hong, J. P.
我们在10K<；T<；300K温度范围内研究了锂(Li)掺杂对多晶NiO薄膜双稳态电阻转换的影响。对电阻开关输运的温度依赖性的分析表明，Li掺杂可以改变关态的热学性质，从而实现稳定的开关操作。结果表明，在NiO中掺杂Li可以改善NiO的保持性和开关电压的稳定性。(C)2008年美国物理研究所。
We investigated the effects of lithium (Li)-doping on bi-stable resistance switching in polycrystalline NiO film in the temperature range of 10 K < T < 300 K. Compliance-dependent resistive switching transport revealed some distinctive and interesting features not observed in undoped NiO films previously studied. An analysis of the temperature dependence of the resistive switching transport showed that Li-doping could modify the thermal properties of the off-state leading to a stable on/off switching operation. It is clearly shown that doping Li in NiO can improve NiO's retention properties and stability of on/off switching voltages. (c) 2008 American Institute of Physics.