Hardening Effect of GaP1-xNx and GaAs1-xNx Alloys by Adding Nitrogen Atoms
Hardening Effect of GaP1-xNx and GaAs1-xNx Alloys by Adding Nitrogen Atoms
复制标题
添加氮原子对 GaP1-xNx 和 GaAs1-xNx 合金的硬化作用
DOI：
10.1143/jjap.41.7301
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发表时间：
2002
影响因子：
1.5
通讯作者：
K. Aiki
中科院分区：
文献类型：
--
作者：
K. Momose;H. Yonezu;Y. Fujimoto;K. Ojima;Y. Furukawa;A. Utsumi;K. Aiki
我们研究了GaP_（1-x）Nx/GaP和GaAs_（1-x）Nx/GaAs的应变弛豫过程，以阐明它们的机械特性。通过透射电子显微镜（TEM）观察到，与具有类似晶格失配差距层相比，GaP 1-xNx和GaAs 1-xNx层中的临界厚度更大，失配位错的产生速率更慢。对于相同的氮组分2%，GaAs 1-xNx层的临界厚度大于GaP 1-xNx层的临界厚度。高裂纹密度的方向与高错配位错密度的方向正交。这些结果表明，在III-V-N合金如GaP 1-xNx和GaAs 1-xNx中，位错的传播被阻止，使得这些合金比缺少氮原子的III-V化合物更硬。这一特征可归因于氮原子的位错钉扎和合金硬化效应。
We investigated the strain relaxation process of GaP1-xNx/GaP and GaAs1-xNx/GaAs in order to clarify their mechanical characteristics by adding nitrogen atoms. It was observed by transmission electron microscopy (TEM) that the critical thicknesses were greater and the generation rates of the misfit dislocations were slower in the GaP1-xNx and GaAs1-xNx layers than those in the GaP layer with a similar lattice mismatch. The critical thickness of the GaAs1-xNx layer was greater than that of the GaP1-xNx layer for the same nitrogen composition of 2%. The direction of higher crack density was orthogonal to that of the higher misfit dislocation density. These results indicate that the propagation of dislocations is prevented in III–V–N alloys such as GaP1-xNx and GaAs1-xNx, so that these alloys are harder than III–V compounds that lack nitrogen atoms. This feature could be attributed to the dislocation pinning and alloy hardening effects due to nitrogen atoms.