Amorphous Oxide Semiconductor TFTs for Displays and Imaging
Amorphous Oxide Semiconductor TFTs for Displays and Imaging
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DOI：
10.1109/jdt.2013.2292580
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发表时间：
2014-11-01
影响因子：
--
通讯作者：
Robertson, John
中科院分区：
文献类型：
--
作者：
Nathan, Arokia;Lee, Sungsik;Robertson, John
本文综述了基于非晶氧化物半导体工艺制备的光电晶体管的可见光探测机理。虽然这类材料被认为是光学透明的，但位于亚能隙态的氧缺陷（例如空位）的存在以及它们在照明下的电离引起蓝色和绿色光子的吸收。在更高的能量下，我们有通常的带间吸收。特别是，即使在照明停止后，氧缺陷仍保持电离，导致持续的光电导性，这可能限制有源矩阵成像阵列的帧速率。然而，光电导性的持久性可以通过部署门脉冲方案来克服，该方案能够实现用于高级应用（诸如用于无触摸交互的传感器嵌入式显示器）的现实帧速率。
This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated using amorphous oxide semiconductor technology. Although this family of materials is perceived to be optically transparent, the presence of oxygen deficiency defects, such as vacancies, located at subgap states, and their ionization under illumination, gives rise to absorption of blue and green photons. At higher energies, we have the usual band-to-band absorption. In particular, the oxygen defects remain ionized even after illumination ceases, leading to persistent photoconductivity, which can limit the frame-rate of active matrix imaging arrays. However, the persistence in photoconductivity can be overcome through deployment of a gate pulsing scheme enabling realistic frame rates for advanced applications such as sensor-embedded display for touch-free interaction.