High-Gain SiC MESFETs Using Source-Connected Field Plates
High-Gain SiC MESFETs Using Source-Connected Field Plates
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DOI：
10.1109/led.2009.2027211
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发表时间：
2009-08
影响因子：
4.9
通讯作者：
S. Sriram;H. Hagleitner;D. Namishia;T. Alcorn;T. Smith;B. Pulz
中科院分区：
文献类型：
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作者：
S. Sriram;H. Hagleitner;D. Namishia;T. Alcorn;T. Smith;B. Pulz
我们证明了第一次改善的射频（RF）增益的SiC MESFER通过使用源连接场板（FP）。用这种方法制造的MESFER在3.1 GHz时显示出超过15.7 dB的新记录最大稳定增益。这比没有FP的基线器件高2.7 dB。还实现了大于4 W/mm的RF功率输出，显示了这些器件用于高功率操作的潜力。
We demonstrate for the first time improvement of radio-frequency (RF) gain of SiC MESFETs by using source-connected field plates (FPs). MESFETs fabricated with this approach show a new record maximum stable gain exceeding 15.7 dB at 3.1 GHz. This is 2.7 dB higher than the baseline devices without FP. RF power output greater than 4 W/mm was also achieved showing the potential of these devices for high-power operation.