Interfacial phase formation in Cu-Mg alloy films on SiO2
Interfacial phase formation in Cu-Mg alloy films on SiO2
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SiO2 上 Cu-Mg 合金薄膜界面相的形成
DOI：
10.1063/1.1647264
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发表时间：
2004
影响因子：
3.2
通讯作者：
G. Ramanath
中科院分区：
文献类型：
--
作者：
M. J. Frederick;G. Ramanath
本文报道了过饱和Cu-10在真空退火过程中膜- sio2界面的化学变化和相形成。%镁合金薄膜溅射沉积在SiO2上。高分辨率透射电子显微镜、能量色散x射线能谱和电子能量损失能谱显示，Cu和Mg在~ 400°C时穿透~ 20-40 nm进入二氧化硅。在较高温度下，Mg使SiO2还原，形成35 nm厚的连续界面层，该界面层由立方MgO等轴晶粒和少量（约1 vol %）单斜的CuMgSi2O6组成。操纵氧化物和硅酸盐的形成途径可以为使用Cu合金在Cu介电界面上获得超薄扩散屏障开辟可能性，用于未来集成电路中的金属化结构。
We report the chemical changes and phase formation at the film-SiO2 interface during vacuum annealing of supersaturated Cu–10 at. % Mg alloy films sputter-deposited on SiO2. High-resolution transmission electron microscopy, energy dispersive x-ray spectroscopy and electron energy loss spectroscopy reveal that both Cu and Mg penetrate ∼20–40 nm into silica at ∼400 °C. At higher temperatures Mg reduces SiO2 leading to the crystallization of a 35-nm-thick continuous interfacial layer comprised of equiaxed grains of cubic MgO and small amounts (≲1 vol %) of monoclinic CuMgSi2O6. Manipulating oxide and silicate formation pathways could open up possibilities for the use of Cu alloys to obtain ultra-thin diffusion barriers at Cu-dielectric interfaces for future metallization structures in integrated circuits.