Epitaxial ferromagnetic MnAs thin films grown on Si (001): The effect of substrate annealing
Epitaxial ferromagnetic MnAs thin films grown on Si (001): The effect of substrate annealing
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在 Si (001) 上生长的外延铁磁 MnAs 薄膜：衬底退火的影响
DOI：
10.1063/1.361602
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发表时间：
1996
影响因子：
3.2
通讯作者：
J. Boeck
中科院分区：
文献类型：
--
作者：
K. Akeura;Masaaki Tanaka;T. Nishinaga;J. Boeck
本文研究了用分子束外延技术在Si（001）衬底上生长的两种不同类型的外延铁磁MnAs薄膜。当Si衬底在较高温度（~ 900 °C）下退火后生长MnAs时，我们得到了具有双重晶体对称性（I型）的MnAs外延薄膜。相比之下，当在较低温度（约600 °C）下进行Si衬底的热清洗时，外延MnAs薄膜具有四重晶体对称性（II型）。两种MnAs薄膜的生长面均为六方MnAs的（1101）面。第一型MnAs薄膜为单畴结构，具有较强的磁各向异性，而第二型MnAs薄膜为双畴结构，缺乏较强的磁各向异性。
We have studied two different types of epitaxial ferromagnetic MnAs thin films on Si (001) substrates grown by molecular beam epitaxy. When the Si substrates were annealed at a relatively high temperature (∼900 °C) and then MnAs was grown, we obtained epitaxial MnAs films with twofold crystal symmetry (type I). In contrast, when the thermal cleaning of the Si substrate was done at a lower temperature (∼600 °C), epitaxial MnAs thin films had fourfold crystal symmetry (type II). The growth plane in both types of MnAs thin films was the (1101) of the hexagonal MnAs. The type I MnAs films are single domain with strong magnetic anisotropy, whereas the type II MnAs films are double domain with the lack of strong magnetic anisotropy.