Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires
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DOI：
10.1016/j.physe.2006.07.002
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发表时间：
2007-03-01
影响因子：
3.3
通讯作者：
Franciosi, A.
中科院分区：
文献类型：
--
作者：
Piccin, M.;Bais, G.;Franciosi, A.
报道了以Au为生长催化剂，在GaAs和SiO2衬底上用分子束外延（MBE）方法生长的GaAs纳米线的结构和电学性质。通过透射电子显微镜（TEM）观察到Au-Ga颗粒位于纳米线的顶部。在大多数观察到的情况下，单个颗粒包含两种Au-Ga组合物，特别是正交AuGa和β '六方Au 7 Ga 2。在（100）和（111）B衬底上生长的线形状规则，取向整齐。TEM也揭示了纳米线具有纤锌矿晶格结构。电输运测量表明，名义上未掺杂的纳米线是弱n型，而Be和Si掺杂的导线显示p型行为。简要讨论了晶格结构对杂质掺入的影响。(C)2006 Elsevier B. V.保留所有权利。
We report on structural and electrical properties of GaAs nanowires (NWs) grown by molecular beam epitaxy (MBE) on GaAs and SiO2 substrates using Au as growth catalyst. Au-Ga particles are observed on the top of the NWs by transmission electron microscopy (TEM). In most of the observed cases, individual particles contain two Au-Ga compositions, in particular orthorhombic AuGa and beta' hexagonal Au7Ga2. The wires grown on GaAs are regularly shaped and tidily oriented on both (1 0 0) and (1 1 1)B substrates. TEM also reveals that the NWs have a wurtzite lattice structure. Electrical transport measurements indicate that nominally undoped NWs are weakly n-type while both Be- and Si-doped wires show p-type behaviour. The effect of the lattice structure on impurity incorporation is briefly discussed. (C) 2006 Elsevier B.V. All rights reserved.