X-ray scattering studies of surfactant mediated epitaxial growth of Si/Ge/Si(001) heterostructures
X-ray scattering studies of surfactant mediated epitaxial growth of Si/Ge/Si(001) heterostructures
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表面活性剂介导的Si/Ge/Si(001)异质结构外延生长的X射线散射研究
DOI：
10.1063/1.1288703
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
M. Bedzyk
中科院分区：
文献类型：
--
作者：
W. Rodrigues;O. Sakata;Tien;D. Walko;D. Marasco;M. Bedzyk
采用掠入射x射线衍射、x射线反射率、低能电子衍射和俄歇电子能谱等方法研究了表面活性剂在Si（001）上以Bi为表面活性剂进行分子束外延生长的Si/Ge薄膜的应变和形貌。Bi通过抑制Ge在Si中的偏析来防止Ge和Si层的混合。在没有表面活性剂的情况下，Ge/Si（001）的临界厚度为3层（ML）。使用Bi，在厚度达10 ML的薄膜中观察到Ge的二维生长，在Ge生长7 ML时开始出现应变松弛。在10 ML时，顶部的Ge原子层仅部分放松。这是通过在Ge和Si层的界面引入粗糙度来实现的。
The strain and morphology of Si/Ge films grown by surfactant mediated molecular beam epitaxy on Si(001) with Bi as the surfactant were studied with grazing-incidence x-ray diffraction, x-ray reflectivity, low-energy electron diffraction, and Auger electron spectroscopy. Bi is observed to prevent the intermixing of Ge and Si layers by inhibiting Ge segregation in Si. Without a surfactant the critical thickness of Ge/Si(001) is 3 monolayers (ML). Using Bi, two-dimensional growth of Ge is observed for films up to 10 ML in thickness, with the onset of strain relaxation occurring at 7 ML of Ge growth. At 10 ML, the top Ge atomic layers are only partially relaxed. This is achieved by introducing roughness at the interface of the Ge and Si layers.