Transmission electron microscopy of GaN layers in-situ doped with Er during plasma assisted MBE
Transmission electron microscopy of GaN layers in-situ doped with Er during plasma assisted MBE
复制标题
等离子体辅助 MBE 期间原位掺杂 Er 的 GaN 层的透射电子显微镜
DOI：
10.1002/pssc.200461500
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
A. Steckl
中科院分区：
文献类型：
--
作者：
T. Wojtowicz;P. Ruterana;D. Lee;A. Steckl
用透射电子显微镜对等离子体辅助分子束外延生长的一系列掺铒GaN层进行了研究。在镓电池温度为870-930 °C的窗口中，形成的Ga液滴最多，在这种情况下，发射效率低。然而，就微观结构而言，最佳结晶度的层将给出最高的PL信号并不明显。（© 2005 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
A TEM investigation has been carried out on a series of Er GaN layers doped in-situ plasma assisted MBE growth. In the window of 870–930 °C gallium cell temperatures, Ga droplets are formed at the highest, in that case the emission efficiency is low. However as far as the microstructure is concerned, it is not obvious that the best crystallinity layer will give the highest PL signal. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)