Band-structure engineering to control impact ionisation and related high-field processes
Band-structure engineering to control impact ionisation and related high-field processes
复制标题
用于控制碰撞电离和相关高场过程的能带结构工程
DOI：
10.1049/el:20046315
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发表时间：
2004
影响因子：
1.1
通讯作者：
A. Adams
中科院分区：
文献类型：
--
作者：
A. Adams
即使是少量的高度失配原子的合金化也可以对半导体的电子能带结构产生显著而有益的影响。例如，GaAsN或GaInAsN中的稀量氮可引起导带的相当大的破坏，同时使价带相对不变。这意味着电子的碰撞电离速率可以比空穴的速率小得多，从而导致例如低噪声雪崩光电二极管的产生。
Alloying with even small amounts of highly mismatched atoms can have dramatic and beneficial effects on the electronic band structure of semiconductors. For example, dilute amounts of nitrogen in GaAsN or GaInAsN may cause considerable disruption of the conduction band while leaving the valence band relatively unaltered. This means that the impact ionisation rate of electrons can be made much smaller than the rate for holes leading, for example, to the production of low-noise avalanche photodiodes.