Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga 2 O 3 Schottky Rectifiers
Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga 2 O 3 Schottky Rectifiers
复制标题
电子注入和温度对 Alpha 辐照的 -Ga 2 O 3 肖特基整流器中少数载流子输运的影响
DOI：
10.1149/2.0101907jss
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发表时间：
2019
影响因子：
2.2
通讯作者：
Pearton, Stephen J.
中科院分区：
文献类型：
--
作者：
Modak, Sushrut;Chernyak, Leonid;Khodorov, Sergey;Lubomirsky, Igor;Yang, Jiancheng;Ren, Fan;Pearton, Stephen J.
研究了在室温至120 C范围内，电子注入对Si掺杂β-Ga 2 O3肖特基整流器在18 MeV α粒子辐照（注量为1012 - 1013 cm− 2）下少数载流子输运的影响。电子束感生电流技术在原位扫描电子显微镜被用来找到作为电子注入的持续时间和温度的函数的α粒子辐照整流器的孔的扩散长度，并与非辐照的参考设备进行比较。电子注入诱导的α粒子辐照样品的扩散长度的影响的活化能被确定为1049 meV相比，参考样品的1074 meV。辐照样品的电子注入效应对扩散长度的激活能的降低归因于辐射诱导产生更靠近导带边缘的额外浅复合中心。
The effect of electron injection on minority carrier transport in Si-doped β-Ga 2 O 3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 10 12–10 13 cm− 2) was studied from room temperature to 120 C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be∼ 49 meV as compared to∼ 74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.