The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content
The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content
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DOI：
10.1002/pssa.201600013
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发表时间：
2016-08
期刊：
影响因子：
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通讯作者：
X. Li;D. G. Zhao;D. Jiang;P. Chen;Z. Liu;J. Zhu;J. Yang;W. Liu;X. He;X. Li;F. Liang;L. Q. Zhang;J. P. Liu;H. Yang
中科院分区：
文献类型：
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作者：
X. Li;D. G. Zhao;D. Jiang;P. Chen;Z. Liu;J. Zhu;J. Yang;W. Liu;X. He;X. Li;F. Liang;L. Q. Zhang;J. P. Liu;H. Yang
数值研究了p型AlGaN电子阻挡层（EBL）中Al组分对InGaN基量子阱激光二极管（LD）电子泄漏和器件性能的影响。结果表明，EBL阻挡电子泄漏的有效性与EBL中Al的含量和InGaN量子阱中In的含量密切相关。在AlGaN EBL中添加适量的Al对低In含量的InGaN QW LD是有效的，而增加Al含量对高In含量的InGaN QW LD几乎没有帮助，甚至是有害的。此外，发现EBL中太多的Al由于最后一个量子势垒（LQB）层中的向下导带弯曲而对所有LD不利。
The effects of Al composition in p‐type AlGaN electron blocking layer (EBL) on electron leakage and device performance in InGaN‐based quantum well (QW) laser diodes (LDs) are numerically investigated in connection with the depth of QWs. It is found that the effectiveness of EBL in blocking electron leakage depends much on Al content in EBL and In content in InGaN QWs. It is effective for low‐In‐content InGaN QW LDs to add moderate Al in AlGaN EBL, while it is hardly helpful and even harmful for high‐In‐content InGaN QW LDs to increase Al content. In addition, it is found that too much Al in EBL is unfavorable for all LDs due to the downward conduction band‐bending in the last quantum barrier (LQB) layer.