Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
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绝缘栅应变硅 n 沟道调制掺杂场效应晶体管中的低频噪声
DOI：
10.1143/jjap.46.4011
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发表时间：
2007
影响因子：
1.5
通讯作者：
M. Shur
中科院分区：
文献类型：
--
作者：
S. Rumyantsev;K. Fobelets;T. Hackbarth;M. Shur
本文研究了绝缘栅应变硅n沟道调制掺杂场效应晶体管（MOSMODFFET）和控制硅金属氧化物半导体场效应晶体管（MOSFET）在栅压低于和高于阈值时的1/ f噪声。所有晶体管都具有20 nm的沉积栅极氧化物和0.5 µm的栅极长度。从电容-和电流-电压特性中提取的迁移率对于MOSMOSFET在580-700 cm 2 V-1 s-1之间，对于Si MOSFET在300-400 cm 2 V-1 s-1之间。尽管在迁移率的差异，两个FET表现出相同的噪声特性。1/ f噪声被发现很好地描述了载波数波动的模型，等于低于和高于阈值。陷阱的有效密度为1.5 ×1010 eV-1 cm-2，这是造成噪声的原因，在常规n沟道Si MOSFET的通常范围内，略高于p-SiGe MODFFET。
The 1/ f noise in insulated gate strained Si n-channel modulation doped field effect transistors (MOSMODFETs) and in control Si metal–oxide–semiconductor FETs (MOSFETs) has been studied at gate voltages below and above the threshold. All transistors have a deposited gate oxide of 20 nm and gate length of 0.5 µm. Mobilities extracted from the capacitance– and current–voltage characteristics were found between 580–700 cm2 V-1 s-1 for the MOSMODFETs, and between 300–400 cm2 V-1 s-1 for the Si MOSFETs. In spite of the difference in the mobility both FETs demonstrated identical noise characteristics. The 1/ f noise was found well described by the model of number of carriers fluctuations equally below and above threshold. The effective density of traps is ∼5×1010 eV-1 cm-2 responsible for the noise was within the usual range reported before for regular n-channel Si MOSFETs and somewhat higher than for p-SiGe MODFETs.