Neutron Detection Performance of Silicon Carbide and Diamond Detectors with Incomplete Charge Collection Properties
Neutron Detection Performance of Silicon Carbide and Diamond Detectors with Incomplete Charge Collection Properties
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DOI：
10.1016/j.nima.2016.11.006
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发表时间：
2017-03
影响因子：
1.4
通讯作者：
M. Hodgson;A. Lohstroh;P. Sellin;D. Thomas
中科院分区：
文献类型：
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作者：
M. Hodgson;A. Lohstroh;P. Sellin;D. Thomas
使用碳基宽带隙半导体探测器进行中子探测和光谱学的好处之前已在文献中讨论过。然而，在撰写本文时，这些探测器在可用性、成本、尺寸和感知质量方面仍然存在局限性。这项研究表明，较低质量的材料（表现为电荷收集效率 (CCE) 较低、分辨率和极化效应较低）可在晶圆级和较低的成本下使用，可以满足多个数量级通量的快速中子检测和光谱学要求，其中只需要粗略的能量辨别。在这项研究中，单晶金刚石探测器（D-SC，具有 100% CCE）、多晶金刚石（D-PC，具有 ≈4% CCE）和半绝缘碳化硅（SiC-SI，约 35% CCE）的 α 和快中子性能进行了比较。所有探测器均以能量峰值位置和计数率随辐照时间变化的形式表现出 α 诱发极化效应。尽管存在这些操作问题，我们还是观察到了探测快中子和区分中子能量的能力。这种性能在较宽的动态范围（500-40,000 个中子/秒）内得到了证明，其中在高通量下的 D-PC 和 SiC-SI 中证明了中子诱发极化。
The benefits of neutron detection and spectroscopy with carbon based, wide band gap, semiconductor detectors have previously been discussed within the literature. However, at the time of writing there are still limitations with these detectors related to availability, cost, size and perceived quality. This study demonstrates that lower quality materials—indicated by lower charge collection efficiency (CCE), poor resolution and polarisation effect—available at wafer scale and lower cost, can fulfil requirements for fast neutron detection and spectroscopy for fluxes over several orders of magnitude, where only coarse energy discrimination is required.In this study, a single crystal diamond detector (D-SC, with 100% CCE), a polycrystalline diamond (D-PC, with ≈4% CCE) and semi-insulating silicon carbide (SiC-SI, with ≈35% CCE) have been compared for alpha and fast neutron performance.All detectors demonstrated alpha induced polarisation effects in the form of a change of both energy peak position and count rate with irradiation time. Despite these operational issues the ability to detect fast neutrons and distinguish neutron energies was observed.This performance was demonstrated over a wide dynamic range (500–40,000 neutrons/s), with neutron induced polarisation being demonstrated in D-PC and SiC-SI at high fluxes.