Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics
Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics
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辐射电介质光激电子发射非选择性光谱的分析方法
DOI：
10.1002/pssa.200420054
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
V. Kortov
中科院分区：
文献类型：
--
作者：
A. Zatsepin;D. Biryukov;V. Kortov
本文提出并证实了一种处理辐照晶体和非晶体非选择性光受激电子发射（OSEE）谱的方法。该方法允许分离离散中心的发射贡献，同时考虑材料的辐射诱导结晶化效应和电子发射的非稳态。OSEE选择带的分离有助于建立离散发射活性中心的起源，并使估计表面层中局部辐射缺陷的浓度和参数成为可能。利用发射电流的动力学和修正的等时线温度依赖关系计算了OSEE的量子产率和光激发缺陷的电离势垒。该方法的一些能力已被证明的玻璃状SiO2和结晶Be 2SiO 4的一个例子。缺氧中心（ODC），体和表面E′-中心，以及非桥接氧空穴中心（NBOHC）已经被记录下来。（© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
A method has been proposed and substantiated for processing of nonselective optically stimulated electron emission (OSEE) spectra of irradiated crystalline and amorphous dielectrics. This method allows the separation of the emission contribution of discrete centers taking into account effects of radiation‐induced electrization of materials and the unsteady state of the electron emission. Separation of OSEE selective bands facilitates the establishment of the origin of discrete emission‐active centers and makes it possible to estimate the concentration and parameters of radiation defects localized in surface layers. The quantum yields of OSEE and ionization barriers of optically excited defects are calculated using kinetic and corrected isochronal temperature dependences of the emission current. Some capabilities of the method have been demonstrated by an example of glassy SiO2 and crystalline Be2SiO4. Oxygen‐deficient centers (ODCs), bulk and surface E′‐centers, and also non‐bridging oxygen hole centers (NBOHCs) have been recorded. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)