Strain engineering of vertical molybdenum ditelluride phase-change memristors
Strain engineering of vertical molybdenum ditelluride phase-change memristors
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DOI：
10.1038/s41928-023-01071-2
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发表时间：
2023-08
影响因子：
34.3
通讯作者：
W. Hou;Ahmad Azizimanesh;Aditya Dey;Yufeng Yang;Wuxiucheng Wang;Chen Shao;Hui Wu;H. Askari;Sobhit Singh;Stephen M. Wu
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作者：
W. Hou;Ahmad Azizimanesh;Aditya Dey;Yufeng Yang;Wuxiucheng Wang;Chen Shao;Hui Wu;H. Askari;Sobhit Singh;Stephen M. Wu
电场控制的电子相变和结构相变可以作为二维材料中记忆开关的一种机制。然而，这类2D相变忆阻器的性能通常不会优于其他2D忆阻器。在这里，我们报道了基于应变工程多层二硫化钼(MoTe2)的高性能双极相变忆阻器。利用工艺诱导应变工程，应力金属薄膜被图案化成触点，在MoTe2中诱导应变驱动的半金属到半导体的相变，形成以半导体MoTe2为有源区的自对准垂直传输忆阻器。通过应变使材料接近相变边界，器件的开关电压为90 mV，通断比为108，开关时间为5 ns，保持率大于105s。一个单一的工艺参数，接触金属膜力(膜应力和膜厚度的乘积)可以改变，以调节器件开关电压和通断比。
Electric-field-controlled electronic and structural phase transitions can be used as a mechanism for memristive switching in two-dimensional (2D) materials. However, such 2D phase-change memristors do not typically outperform other 2D memristors. Here we report high-performance bipolar phase-change memristors that are based on strain-engineered multilayer molybdenum ditelluride (MoTe2). Using process-induced strain engineering, stressed metal thin films are patterned into contacts that induce a strain-driven semimetallic-to-semiconducting phase transition in the MoTe2, forming a self-aligned vertical transport memristor with semiconducting MoTe2as the active region. By using strain to bring the material close to the phase transition boundary, the devices can exhibit switching voltages of 90 mV, on/off ratios of 108, switching times of 5 ns and retentions of over 105s. A single-process parameter, contact metal film force (the product of the film stress and film thickness), can be varied to tune the device switching voltage and on/off ratio.