Sharp-line luminescence and absorption in ZnGeP2
Sharp-line luminescence and absorption in ZnGeP2
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DOI：
10.1063/1.1399028
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发表时间：
2001-09
影响因子：
3.2
通讯作者：
C. Rablau;N. Giles
中科院分区：
文献类型：
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作者：
C. Rablau;N. Giles
光致发光和光吸收光谱已被用来研究大块ZnGeP2。两个尖锐的零声子线与相反的偏振分辨在1.7849 eV（在70 K）和1.7784 eV（在5 K），分别在发射。热化发生在这两条线之间，表明中心的分裂激发态。相当多的结构细节在这些线的振动边带中得到解决，揭示了声子能量为6.3±0.1 meV和43.7±0.1 meV。相似的声子能量在低温吸收光谱中被分辨。ZnGeP2的这些结果被解释由一个模型的激子的辐射复合绑定到一个等电子缺陷中心。观察到的极化行为的尖锐线光谱可以产生的内置的tetraphite失真沿着与黄铜矿结构的c轴。
Photoluminescence and optical absorption spectroscopies have been used to study bulk ZnGeP2. Two sharp zero-phonon lines with opposite polarizations are resolved in emission at 1.7849 eV (at 70 K) and 1.7784 eV (at 5 K), respectively. Thermalization occurs between these two lines, suggesting a split excited state of the center. Considerable structural detail is resolved in the vibronic sidebands of these lines, revealing phonon energies of 6.3±0.1 meV and 43.7±0.1 meV. Similar phonon energies are resolved in low-temperature absorption spectra. These results for ZnGeP2 are explained by a model of radiative recombination of excitons bound to an isoelectronic defect center. The observed polarization behavior of the sharp-line spectra can be produced by the built-in tetragonal distortion along the c axis associated with the chalcopyrite structure.