Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects
Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects
复制标题
DOI：
10.1088/1361-6463/abcb34
复制
发表时间：
2021-03-11
影响因子：
3.4
通讯作者：
Houston, Peter
中科院分区：
文献类型：
--
作者：
Pinchbeck, Joseph;Lee, Kean Boon;Houston, Peter
已经制备并研究了具有一系列双金属栅（DMG）长度的AlGaN/GaN高电子迁移率晶体管。与传统的单金属栅器件相比，DMG器件的栅电阻提高了9%。这归因于两个栅极金属导致的栅极区域下的电场分布。漏极诱导势垒降低也被抑制使用亚微米DMG设备，与漏极诱导势垒降低下降约50%，由于在二维电子气通道的潜在屏蔽效应。
AlGaN/GaN high electron mobility transistors with a range of dual metal gate (DMG) lengths have been fabricated and studied. An improvement in transconductance up to 9% has been measured in the DMG devices in comparison to the conventional single metal gate devices. This is attributed to the distribution of the electric field under the gate region as a result of two gate metals. The drain induced barrier lowering is also suppressed using the sub-mu m DMG devices, with a drain induced barrier lowering decrease of around 50% due to a potential shielding effect in the two-dimensional electron gas channel.