GaAs(111)B(√19X√19)R23.4° surface reconstruction
GaAs(111)B(√19X√19)R23.4° surface reconstruction
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DOI：
10.1116/1.1387460
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发表时间：
2001-07-01
影响因子：
1.4
通讯作者：
Palmstrom, CJ
中科院分区：
文献类型：
--
作者：
Farrell, HH;Lu, J;Palmstrom, CJ
用X射线光电子能谱和扫描隧道显微镜测定了GaAs（1 1 1）B（root 19 X root 19）R 23.4度表面重构的结构。这种结构的特点是由Biegelsen和同事首先发现的六重As冠。此外，我们发现，As和Ga原子发生在反位的位置在顶部双层，并可能在下面的层以及。这些反位原子被认为是为了增强外延生长自组装纳米结构中涉及的岛的形成，并干扰大多数GaAs表面上同质和异质外延特征的逐层生长。与早期为这种重建提出的几种结构不同，我们提出所有As（Ga）悬挂轨道都被填充（空），这与电子计数规则一致。(C)2001年美国真空学会。
The structure of the GaAs(1 1 1)B(root 19 X root 19)R23.4 degrees surface reconstruction has been determined using x-ray photoelectron spectroscopy and scanning tunneling microscopy. This structure is characterized by the sixfold As crown first found by Biegelsen and co-workers. In addition, we find that both As and Ga atoms occur in antisite positions in the top bilayer, and possibly in underlying layers as well. These antisite atoms are proposed to enhance the island formation involved in the epitaxial growth self-assembling nanostructures, and to interfere with the layer-by-layer growth that characterizes homo-and heteroepitaxy on most GaAs surfaces. Unlike several earlier structures proposed for this reconstruction, we propose that all of the As (Ga) dangling orbitals are filled (empty), consistent with the electron counting rule. (C) 2001 American Vacuum Society.