Low-temperature wafer bonding using gold layers
Low-temperature wafer bonding using gold layers
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DOI：
10.1109/icept.2009.5270698
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发表时间：
2009-09
期刊：
影响因子：
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通讯作者：
Yinghui Wang;Jian Lu;T. Suga
中科院分区：
文献类型：
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作者：
Yinghui Wang;Jian Lu;T. Suga
采用表面活化键合（SAB）方法，在25~200°C的温度范围内研究了金层的键合可能性。使用不同厚度的金层确认了Si到Si和Si到PZT衬底的互连。研究了表面粗糙度、真空度、硅片温度和轧制等因素对薄膜性能的影响。使用扫描声学显微镜（SAM）观察结合的样品。用刀片试验测定结合能，用拉伸试验评价结合强度。利用扫描电镜和光学显微镜观察了界面和拉伸断口的微观组织。键合晶片的界面几乎没有空隙。金层对金属扩散和塑性变形有效，从而扩大了结合面积。
The bonding possibility of gold layers was investigated at 25~200°C in wafer scale using a surface activated bonding (SAB) method. The interconnections of Si-to-Si and Si-to-PZT substrates were confirmed using different thickness of gold layers. The influence of surface roughness, vacuum condition, wafer temperature and rolling was studied. The bonded samples were observed using a scan acoustic microscope (SAM). The bonding energy was measured using razor blade test and the bonding strength was evaluated using tensile test. The microstructures on interfaces and the fractured surfaces after tensile test were observed using a scanning electron microscope (SEM) and an optical microscope. The interface of the bonded wafers was nearly void free. The gold layers were effective on metal diffusion and plastic deformation and therefore enlarge the bonded areas.