High-resolution electron microscopy of neutron-irradiation-induced dislocations in SiC
High-resolution electron microscopy of neutron-irradiation-induced dislocations in SiC
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DOI：
10.1080/01418619008244788
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发表时间：
1990-10
影响因子：
1.6
通讯作者：
T. Yano;T. Iseki
中科院分区：
文献类型：
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作者：
T. Yano;T. Iseki
摘要 使用高分辨率电子显微镜观察了 β- 和 α- 碳化硅 (SiC) 中中子辐照引起的位错。在β-SiC中，位于{111}面上的直径约20nm的小平面缺陷被确定为间隙Frank环，其具有Burgers矢量b＝1/3<111>。基于多层切片方法的图像模拟，确定循环由将单个 Si-C 层插入到 {111} 堆叠中以创建两个旋转层组成。这些环路是由快堆中超过约 5 × 1026 中子 m−2 (E>0.1 MeV) 的重中子辐照剂量引起的。六角形 α-SiC 中直径几纳米的缺陷核是由热反应堆中较低剂量（2 × 1025 中子 m−2）（E > 0.1 MeV）引起的。它们位于 (0001) 基平面上，并且具有 Burgers 矢量 b=⅙[0001]。
Abstract Neutron-irradiation-induced dislocations in β- and α-silicon carbide (SiC) were observed using a high-resolution electron microscope. In β-SiC, small planar defects about 20 nm in diameter lying on {111} planes were determined as interstitial Frank loops, having a Burgers vector b=⅓〈111〉. On the basis of image simulation by the multislice method, it was determined that the loops consist of an insertion of a single Si-C layer into {111} stacking to create two rotated layers. These loops were induced by heavy neutron irradiation doses of above approximately 5 × 1026 neutrons m−2 (E>0.1 MeV) in a fast reactor. Defect nuclei a few nanometres in diameter in hexagonal α-SiC were induced by lower doses in a thermal reactor (2 × 1025 neutrons m−2) (E > 0.1 MeV). They are on the (0001) basal plane and have a Burgers vector b=⅙[0001].