Control of threshold voltage in organic thin-film transistors by modifying gate electrode surface with MoOX aqueous solution and inverter circuit applications
Control of threshold voltage in organic thin-film transistors by modifying gate electrode surface with MoOX aqueous solution and inverter circuit applications
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DOI：
10.1063/1.4907317
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发表时间：
2015-02
影响因子：
4
通讯作者：
Rei Shiwaku;Yudai Yoshimura;Yasunori Takeda;K. Fukuda;D. Kumaki;S. Tokito
中科院分区：
文献类型：
--
作者：
Rei Shiwaku;Yudai Yoshimura;Yasunori Takeda;K. Fukuda;D. Kumaki;S. Tokito
我们用MoOX水溶液处理有机薄膜晶体管的栅极表面，控制其阈值电压，并将其用于构建逆变电路。阈值电压通过改变MoOX水溶液的浓度而改变。栅电极的功函数与阈值电压之间存在很强的相关性。通过降低MoOx溶液的浓度，选择性地改变了逆变电路中两个有机TFT器件之一的阈值电压+2.3 V。我们控制了p型有机逆变电路的开关电压，获得了优异的逆变特性。这些结果表明，使用MoOx水溶液来控制阈值电压对于集成电路应用是非常有用的。
We controlled the threshold voltage of organic thin-film transistors (TFTs) by treating only the gate electrode surface with a MoOX aqueous solution and used them to build inverter circuits. The threshold voltage was changed by varying the concentration of the MoOX aqueous solution. A strong correlation between the work function of the gate electrode and the threshold voltage was observed. The threshold voltage of one of the two organic TFT devices in the inverter circuit was selectively changed by +2.3 V by reducing the concentration of the MoOx solution. We controlled the switching voltage of p-type organic inverter circuits and obtained excellent inverter characteristics. These results indicate that using a MoOx aqueous solution to control the threshold voltage is very useful for integrated circuits applications.