Anomalous Piezoresistive Changes of Core-Shell Structured SIC Nanowires
Anomalous Piezoresistive Changes of Core-Shell Structured SIC Nanowires
复制标题
DOI：
10.1109/mems51782.2021.9375210
复制
发表时间：
2021-01
期刊：
影响因子：
--
通讯作者：
A. Uesugi;S. Nakata;Kodai Inoyama;K. Sugano;Y. Isono
中科院分区：
文献类型：
--
作者：
A. Uesugi;S. Nakata;Kodai Inoyama;K. Sugano;Y. Isono
使用以单根 SiC 纳米线作为通道的 FET 型器件，通过改变栅极电压的电阻率测量，对核壳碳化硅 (SiC) 纳米线 (NW) 的压阻效应进行了实验评估。无应变的 Id-Vg 特性显示，由于壳中的固定电荷，通过将绝缘壳从 SiOx 更改为 Al2O3，FET 行为从 n 沟道型变为 p 沟道型。通过实验评估了由绝缘壳中的固定电荷和栅极电压确定的初始表面电势对SiCNW小应变下电阻变化率的影响。由于壳中固定电荷的极性，SiCNW 在 1% 小应变下的应变系数在 SiOx 壳和 Al2O3 壳 SiCNW 之间从 -21 到 40 不同，而在 Al2O3 壳 SiCNW 上，随着负电压增量从 0 到 -0.5 V，应变系数从 40 增加到 100。
Piezoresistive effects of core-shell silicon carbide (SiC) nanowires (NWs) were experimentally evaluated using a FET-type device with single SiC nanowire as a channel, by electrical resistivity measurement with changing gate voltages. The Id-Vg characteristics with no straining showed change in FET behaviors from n-channel type to p-channel type by changing insulating shell from SiOx to Al2O3 due to the fixed charge in the shells. An influence of initial surface potential determined with the fixed charge in the insulating shells and gate voltages on the resistance change ratio at a small strain of SiCNWs was experimentally evaluated. Gauge factors at 1 % small strain of SiCNW differed from -21 to 40 between SiOx-shell and Al2O3-shell SiCNWs due to the polarity of the fixed charge in the shells, and increased from 40 to 100 on Al2O3-shell SiCNW with a negative voltage increment from 0 to -0.5 V.