Changes in the Proliferation Rate, Clonogenicity, and Radiosensitivity of Cultured Cells During and After Continuous Low-Dose-Rate Irradiation
Changes in the Proliferation Rate, Clonogenicity, and Radiosensitivity of Cultured Cells During and After Continuous Low-Dose-Rate Irradiation
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DOI：
10.1177/1559325819842733
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发表时间：
2019-04-22
期刊：
影响因子：
2.5
通讯作者：
Shibamoto, Yuta
中科院分区：
文献类型：
--
作者：
Wang, Zhen;Sugie, Chikao;Shibamoto, Yuta
我们研究了连续低剂量辐射对人涎腺肿瘤细胞增殖、克隆形成、辐射敏感性和DNA双链断裂修复的影响。人唾液腺细胞培养在丙烯酸板上，在极低剂量（4.3 μ Sv/h）或低剂量（27 μ Sv/h）辐射发射片或无片。每1或2周比较3组的总细胞数和平板接种效率，直至开始培养后6周。在第2、4和6周，将在极低剂量或低剂量片上培养的HSG细胞在2至8戈伊照射后的存活分数与对照组的存活分数进行比较。在4周时，评估以2戈伊照射的HSG细胞的磷酸化组蛋白（γ H2 AX）灶形成，并评价DSB。在有或没有低剂量发射片的情况下，未观察到总细胞数或平板接种效率的显著差异。极低剂量组照射后2 ~ 6周和低剂量组照射后2 ~ 4周的存活分数均高于对照组（P <0.01）。因此，清楚地证明了放射适应性反应。从γ H2 AX灶定量，认为适应性反应与该细胞系中DSB的有效修复，特别是缓慢修复相关。
We investigated the effects of continuous low-dose radiation on proliferation, clonogenicity, radiosensitivity, and repair of DNA double-strand breaks (DSBs) in human salivary gland (HSG) tumor cells. Human salivary gland cells were cultured on acrylic boards above very-low-dose (4.3 mu Sv/h) or low-dose (27 mu Sv/h) radiation-emitting sheets or without sheets. Total cell numbers and plating efficiencies were compared among the 3 groups every 1 or 2 weeks until 6 weeks after starting culture. At 2, 4, and 6 weeks, surviving fractions of HSG cells after irradiation at 2 to 8 Gy cultured on the very-low-dose or low-dose sheets were compared to those of the control. At 4 weeks, HSG cells irradiated at 2 Gy were assessed for phosphorylated histone (gamma H2AX) foci formation, and DSBs were evaluated. No significant differences were observed in total cell number or plating efficiencies with or without low-dose-emitting sheets. The surviving fractions after irradiation of the very-low-dose group at 2 to 6 weeks and those of the low-dose group at 2 to 4 weeks were higher than those of the control (P < .01). Thus, a radioadaptive response was clearly demonstrated. From the gamma H2AX foci quantification, the adaptive responses were considered to be associated with the efficient repair of DSB, especially slow repair, in this cell line.