Highly Sensitive Polymer Phototransistor Based on the Synergistic Effect of Chemical and Physical Blending in D (Donor)-A (Acceptor) Copolymers
Highly Sensitive Polymer Phototransistor Based on the Synergistic Effect of Chemical and Physical Blending in D (Donor)-A (Acceptor) Copolymers
复制标题
基于D（施主）-A（受主）共聚物化学和物理共混协同效应的高灵敏聚合物光电晶体管
DOI：
10.1002/aelm.201900174
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发表时间：
2019
影响因子：
6.2
通讯作者：
Qiu Longzhen
中科院分区：
文献类型：
--
作者：
Wang Xiaohong;Zhao Fengsheng;Xue Zhan;Yuan Ye;Huang Ming;Zhang Guobing;Ding Yunsheng;Qiu Longzhen
研究了以异靛蓝和苯并二呋喃二酮单元的不同比例化学共混以及与绝缘聚合物的物理共混制备的给体-受体共聚物（PBTIDBIBDFs）为基础的有机光电晶体管（OPTs）。OPT器件的光响应可以通过化学和物理混合的组合来协同调节。薄膜形态和器件的移动性可以通过化学共混来调节，而光响应通过与聚己二酸1，4-丁二醇酯（PBA）的物理共混来大大增强。共混聚合物PBTIDBIBDF-5与PBA的光响应表现出3.45 × 104的光/暗电流比（P）和128 A W−1的响应度（R）。由于化学和物理混合的协同作用，R值显著增加了4.9 × 104倍，检测限为0.03 mW cm−2。高灵敏度的OPT性能归因于化学和物理共混的协同效应，其改变了能级并增加了能量陷阱密度。此外，还制备了柔性的低电压光电倍增管，其光响应参数PandR分别达到5.7 × 104和180 mA W−1。该工艺具有成本效益，为高光敏性、低电压和柔性OPTs的制造提供了一种新方法。
Organic phototransistors (OPTs) based on donor–acceptor copolymers (PBTIDBIBDFs) using chemical blending of different ratios of isoindigo and benzodifurandione units and physical blending with insulating polymers are investigated. The photoresponse of the OPT devices can be synergistically tuned by combining chemical and physical blending. The film morphology and the mobility of the devices can be adjusted using chemical blending, while the photoresponse is greatly enhanced by physical blending with poly(1,4‐butylene adipate) (PBA). The photoresponse of the blending polymer PBTIDBIBDF‐5 with PBA exhibits photo‐/dark current ratio (P) of 3.45 × 104and responsivity (R) of 128 A W−1. TheRvalue shows a remarkable 4.9 × 104times increase due to the synergistic effect of chemical and physical blending, with an ultralow detection limit of 0.03 mW cm−2. The highly sensitive OPT performance is attributed to the synergistic effect of chemical and physical blending, which changes the energy level and increases the energy trap density. Furthermore, flexible low‐voltage OPTs are fabricated and the photoresponse parametersPandRof the devices reach 5.7 × 104and 180 mA W−1, respectively. This process is cost‐effective and provides a novel method for the fabrication of high‐photosensitivity, low‐voltage, and flexible OPTs.