Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials
Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials
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DOI:
10.1088/0268-1242/29/11/115028
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发表时间:
2014-10
影响因子:
1.9
通讯作者:
L. Jiang;J. Gallagher;C. L. Senaratne;T. Aoki;J. Mathews;J. Kouvetakis;J. Menéndez
中科院分区:
文献类型:
--
作者:
L. Jiang;J. Gallagher;C. L. Senaratne;T. Aoki;J. Mathews;J. Kouvetakis;J. Menéndez
The compositional dependence of the lowest direct and indirect band gaps in Ge1−ySny alloys has been determined from room-temperature photoluminescence measurements. This technique is particularly attractive for a comparison of the two transitions because distinct features in the spectra can be associated with the direct and indirect gaps. However, detailed modeling of these room temperature spectra is required to extract the band gap values with the high accuracy required to determine the Sn concentration yc at which the alloy becomes a direct gap semiconductor. For the direct gap, this is accomplished using a microscopic model that allows the determination of direct gap energies with meV accuracy. For the indirect gap, it is shown that current theoretical models are inadequate to describe the emission properties of systems with close indirect and direct transitions. Accordingly, an ad hoc procedure is used to extract the indirect gap energies from the data. For y , much lower than early theoretical predictions based on the virtual crystal approximation, but in better agreement with predictions based on large atomic supercells.