Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
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DOI：
10.1038/s41467-019-14022-3
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发表时间：
2020-01-28
影响因子：
16.6
通讯作者：
Johnson, A. T. Charlie
中科院分区：
文献类型：
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作者：
Gao, Zhaoli;Wang, Sheng;Johnson, A. T. Charlie
货车德瓦耳斯（vdW）材料的性质通常随着层之间的原子堆叠顺序而显著变化，但这种顺序可能难以控制。三层石墨烯（TLG）堆叠在半金属阿坝或半导体ABC配置中，具有栅极可调带隙，但后者仅通过剥离产生。在这里，我们提出了一种化学气相沉积的方法TLG的增长，产生大大增强的分数和ABC域的大小。关键的见解是，基板曲率可以稳定ABC域。通过调整衬底曲率水平，实现了类似于59%的可控ABC产率。转移到器件衬底后，ABC分数仍然很高，正如通过传输测量所证实的，揭示了预期的可调ABC带隙。衬底形貌工程为外延ABC-TLG和其他VDW材料的大规模合成提供了一条途径。
The properties of van der Waals (vdW) materials often vary dramatically with the atomic stacking order between layers, but this order can be difficult to control. Trilayer graphene (TLG) stacks in either a semimetallic ABA or a semiconducting ABC configuration with a gate-tunable band gap, but the latter has only been produced by exfoliation. Here we present a chemical vapor deposition approach to TLG growth that yields greatly enhanced fraction and size of ABC domains. The key insight is that substrate curvature can stabilize ABC domains. Controllable ABC yields similar to 59% were achieved by tailoring substrate curvature levels. ABC fractions remained high after transfer to device substrates, as confirmed by transport measurements revealing the expected tunable ABC band gap. Substrate topography engineering provides a path to large-scale synthesis of epitaxial ABC-TLG and other vdW materials.