Oxidation of Silicon in the Presence of Chlorine and Chlorine Compounds
Oxidation of Silicon in the Presence of Chlorine and Chlorine Compounds
复制标题
氯和氯化合物存在下硅的氧化
DOI：
10.1149/1.2131472
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发表时间：
1978
影响因子：
3.9
通讯作者：
P. Balk
中科院分区：
文献类型：
--
作者：
Babu R. Singh;P. Balk
对半导体器件和电路更高的制造产量和更高的运行可靠性的需求导致了对所有加工步骤的持续审查。本文的主题是在硅氧化过程中加入氯或氯的一种化合物的影响。在讨论了卤素存在下的氧化动力学和该过程的冶金方面之后，对电效应进行了全面的回顾。重点是消除氧化物电荷中心和界面状态，表面稳定和增强MOS结构中的介电行为，以及增加硅衬底中的少数载流子寿命。总结了采用这种方法所取得的器件性能的改进。充分控制栅极绝缘子的阈值电压和击穿强度是成功制造场效应晶体管的必要条件。十年前，碱离子被发现是MOS结构中表面电位不稳定的主要原因；因此，消除这种形式的氧化物污染是必要的（1-5）。由于在超净制造条件下工作存在一些实际问题，因此开发了PSG稳定工艺，其中杂质直接在金属电极处的薄磷硅酸盐玻璃层中获得（6-9）。另一种可能的解决方案是用一层碱离子无法穿透的氮化硅（Si3N4）层将SiO2薄膜密封起来。在这两种方法中，栅极绝缘体的击穿行为也得到了改善，然而，代价是获得了极化（PSG）或电子上有些不稳定的（SiO2-Si3N4）体系。
The need for higher manufacturing yields and improved operational reliability of semiconductor devices and circuits has led to a continuing scrutiny of all processing steps. Topic of the present paper is the effect of addition of chlorine or one of its compounds during silicon oxidation. After discussing oxidation kinetics in the presence of halogens and the metallurgical aspects of the process, a comprehensive review of the electrical effects is given. Attention is paid to the elimination of oxide charge centers and interface states, surface stabilization and enhanced dielectric behavior in MOS structures, and to the increased minority carrier lifetime in the silicon substrate. The improvements in device characteristics which have been attained using this method are summarized.Adequate control of the threshold voltage and the breakdown strength of the gate insulator are essential conditions for the successful manufacture of field effect transistors. A decade ago alkali ions were found to be a major cause of instability of the surface potential in MOS structures; thus elimination of this form of oxide contamination was imperative (1-5). Since working under ultraclean manufacturing conditions presented some practical problems, the PSG stabilization process was developed where the impurities are gettered in a thin phosphosilicate glass layer directly at the metal electrode (6-9). Another possible solution is sealing off the SiO2 film with a Si3N4 layer which is impenetrable to alkali ions (10-11). In both ca~ es the breakdown behavior of the gate insulator is also improved, however, at the price of obtaining a polarizable (PSG) or an electronically somewhat unstable (SiO2-Si3N4) system.