Dislocation-related trap levels in nitride-based light emitting diodes
Dislocation-related trap levels in nitride-based light emitting diodes
复制标题
DOI：
10.1063/1.4879644
复制
发表时间：
2014-05
影响因子：
4
通讯作者：
G. Venturi;A. Castaldini;A. Cavallini;M. Meneghini;E. Zanoni;Dandan Zhu;C. Humphreys
中科院分区：
文献类型：
--
作者：
G. Venturi;A. Castaldini;A. Cavallini;M. Meneghini;E. Zanoni;Dandan Zhu;C. Humphreys
对InGaN/GaN多量子阱发光二极管（LED）进行了深能级瞬态谱研究，以确定位错密度对深禁带内电子能级的影响。LED是通过金属有机气相外延在GaN模板上生长的，其位错密度为8 × 109 cm−2和3 × 108 cm−2。发现了三个电子俘获能级，分别命名为A、A1和B，能量分别为EA = 0.04 eV、EA 1 = 0.13 eV和EB = 0.54 eV。在具有高位错密度的模板上生长的LED中，捕获能级A具有高得多的浓度。陷阱A和A1的峰值幅度对偏置脉冲宽度的对数依赖性将导致这些陷阱的缺陷识别为与线性排列的缺陷相关联。我们的结论是陷阱A和A1是位错相关的带隙内能级。
Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 109 cm−2 and a low dislocation density of 3 × 108 cm−2. Three trapping levels for electrons were revealed, named A, A1, and B, with energies EA ≈ 0.04 eV, EA1 ≈ 0.13 eV, and EB ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.